Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS₂

Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS2 films at 560 °C in 50 min, within the 450-to-600 °C, 2 h thermal budget window required back-end-of-the-line compatibility modern technology. Transistor measurements reveal on-state current up to ∼140 μA/μm 1 V drain-to-source voltage 100 nm channel lengths, highest reported date 1L grown below 600 using precursors. The effective mobility from transfer length method test structures is 29 ± 5 cm2 V–1 s–1 6.1 × 1012 cm–2 electron density, which comparable mobilities higher temperatures. results this work provide a path toward realization high-quality, thermal-budget-compatible 2D manufacturing.